? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 4000 v v dgr t j = 25 c to 150 c, r gs = 1m 4000 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 300 ma i dm t c = 25 c, pulse width limited by t jm 800 ma p d t c = 25 c 130 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. f c mounting force (plus220) 11..65 / 25..14.6 n/lb. weight plus220 4 g to-247 6 g ds100214a(04/12) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 4000 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = 0.8 ? v dss , v gs = 0v 10 a t j = 125 c 750 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 290 high voltage power mosfets IXTH03N400 ixtv03n400s v dss = 4000v i d25 = 300ma r ds(on) 290 features z international standard packages z fast intrinsic rectifier z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density applications z high voltage power supplies z capacitor discharge z pulse circuits g = gate d = drain s = source tab = drain plus220smd (ixtv_s) g s d (tab) to-247 (ixth) g s d d (tab) preliminary technical information n-channel enhancement mode fast intrinsic rectifier
ixys reserves the right to change limits, test conditions, and dimensions. IXTH03N400 ixtv03n400s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 50v, i d = 100ma, note 1 110 180 ms c iss 435 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 19 pf c rss 6 pf t d(on) 17 ns t r 16 ns t d(off) 86 ns t f 58 ns q g(on) 16.3 nc q gs v gs = 10v, v ds = 1000v, i d = 0.5 ? i d25 1.9 nc q gd 8.8 nc r thjc 0.96 c/w r thcs 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 300 ma i sm repetitive, pulse width limited by t jm 1.2 a v sd i f = 300ma, v gs = 0v, note 1 3.0 v t rr 2.8 s ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 250v, i d = 150ma r g = 50 (external) i f = 1a, -di/dt = 100a / s, v r = 200v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. e ? p 1 2 3 terminals: 1 - gate 2 - drain 3 - source plus220smd outline 1. gate 2,4. drain 3. source note: 1. pulse test, t 300 s, duty cycle, d 2%. additional provisions for lead to lead voltage isolation are required at v ds > 1200v. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 outline
? 2012 ixys corporation, all rights reserved IXTH03N400 ixtv03n400s fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 102030405060708090 v ds - volts i d - milliamperes v gs = 10v 6v 5v 4v fig. 3. output characteristics @ t j = 125oc 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 v ds - volts i d - milliamperes v gs = 10v 6v 5v 4v 3v fig. 4. r ds(on) normalized to i d = 150ma value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 300ma i d = 150ma fig. 5. r ds(on) normalized to i d = 150ma value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 100 200 300 400 500 600 i d - milliamperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 2. extended output characteristics @ t j = 25oc 0 100 200 300 400 500 600 700 0 50 100 150 200 250 300 350 400 v ds - volts i d - milliamperes v gs = 10v 6v 4v 5v fig. 6. maximum drain current vs. case temperature 0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - milliamperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTH03N400 ixtv03n400s ixys ref: t_03n400(3p)10-27-09 fig. 12. maximum transient thermal impedance 0.1 1.0 10.0 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum transient thermal impedance adad 2.0 fig. 7. input admittance 0 50 100 150 200 250 300 350 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v gs - volts i d - milliamperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 i d - milliamperes g f s - millisiemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 100 200 300 400 500 600 700 800 900 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v sd - volts i s - milliamperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 q g - nanocoulombs v gs - volts v ds = 1000v i d = 150ma i g = 1ma fig. 11. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss
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